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Introduction
Commercializing Vertical Gallium Nitride (GaN) semiconductor material technology—Vertical Gallium Nitride, developed in MIT Dr Tomas Palacio’s lab. Compared to current silicon or silicon-carbide semiconductor, Vertical GaN enables more efficient power electronics with improved efficiency, thermal management and reliability.
Problem
Data centers are highly energy and carbon-intensive, and the problem is increasing exponentially due to the rise of AI and cloud computing.